Grants and Contributions:
Title:
Optimization of GaN MOSFET Device Technology
Agreement Number:
953311
Agreement Value:
$25,000.00
Agreement Date:
Jul 1, 2020 - Dec 31, 2020
Description:
The proposed project will attempt to produce tangible improvements to a GaN MOSFET high-frequency integrated circuit platform, with the aim of enabling new applications for communications and radar hardware in various industries.
Organization:
National Research Council Canada
Expected Results:
The purpose of IRAP’s Youth Employment Program is to assist in increasing the supply of highly qualified people, promoting the benefits of advanced studies, demonstrating federal leadership by investing in the skills required to meet the needs of the knowledge economy and facilitating the transition of highly skilled young people to a rapidly changing labour market.
Location:
Edmonton, Alberta, CA T5N 1E1
Reference Number:
172-2020-2021-Q2-953311
Agreement Type:
Contribution
Report Type:
Grants and Contributions
Recipient Business Number:
761594688
Recipient Type:
For-profit organization
Recipient's Legal Name:
TransEON Inc.
Federal Riding Name:
Edmonton Centre
Federal Riding Number:
48014
Program:
Industrial Research Assistance Program – Youth Employment Program
Program Purpose:
The purpose of IRAP’s Youth Employment Program is to assist in increasing the supply of highly qualified people, promoting the benefits of advanced studies, demonstrating federal leadership by investing in the skills required to meet the needs of the knowledge economy and facilitating the transition of highly skilled young people to a rapidly changing labour market.
Coverage:
IRAP Youth Employment Program projects stimulate wealth creation for Canada through technological innovation.
NAICS Code:
334410