Grants and Contributions:
Title:
Advanced Electrothermal Reliability Testing of GaN MOSFET Devices
Agreement Number:
1032693
Agreement Value:
$50,000.00
Agreement Date:
Jul 1, 2025 - Dec 31, 2025
Description:
The proposed project will advance TransEON’s GaN MOSFET foundry platform to full commercialization by continuing intensive electrothermal characterization of devices for high-power RF operation, with the ultimate goal of achieving critical reliability metrics required for field-ready integrated circuits.
Organization:
National Research Council Canada
Expected Results:
The purpose of IRAP Contributions to Firms is to support research, development, adoption and/or adaptation of innovative or technology-driven new or improved products, services or processes in Canada up to their commercialization
Location:
Edmonton, Alberta, CA T5N 1E1
Reference Number:
172-2025-2026-Q2-1032693
Agreement Type:
Contribution
Report Type:
Grants and Contributions
Recipient Business Number:
761594688
Recipient Type:
For-profit organization
Recipient's Legal Name:
TransEON Inc.
Federal Riding Name:
Edmonton Centre
Federal Riding Number:
48014
Program:
Industrial Research Assistance Program – Contributions to Firms
Program Purpose:
The purpose of IRAP Contributions to Firms is to support research, development, adoption and/or adaptation of innovative or technology-driven new or improved products, services or processes in Canada up to their commercialization
Coverage:
IRAP Contributions to Firms projects stimulate wealth creation for Canada through technological innovation.
NAICS Code:
334410