Grants and Contributions
About this information
In June 2016, as part of the Open Government Action Plan, the Treasury Board of Canada Secretariat (TBS) committed to increasing the transparency and usefulness of grants and contribution data and subsequently launched the Guidelines on the Reporting of Grants and Contributions Awards, effective April 1, 2018.
The rules and principles governing government grants and contributions are outlined in the Treasury Board Policy on Transfer Payments. Transfer payments are transfers of money, goods, services or assets made from an appropriation to individuals, organizations or other levels of government, without the federal government directly receiving goods or services in return, but which may require the recipient to provide a report or other information subsequent to receiving payment. These expenditures are reported in the Public Accounts of Canada. The major types of transfer payments are grants, contributions and \'other transfer payments\'.
Included in this category, but not to be reported under proactive disclosure of awards, are (1) transfers to other levels of government such as Equalization payments as well as Canada Health and Social Transfer payments. (2) Grants and contributions reallocated or otherwise redistributed by the recipient to third parties; and (3) information that would normally be withheld under the Access to Information Act and the Privacy Act.
$40,600.00
Jun 1, 2021
For-profit organization
Power-efficient transistor for I/O Applications: Transistor Scaling Behavior
973181
This project is part of a larger effort to aggressively scaling the dimensions our current switch technology. Several switch design parameters have to be investigated due to effects of scaling. This includes parasitic current leakage, breakdown, contact electrodes, drain-induced barrier lowering (DIBL) and more.
The project will focus simulating the various architectural designs for the switch technology , its thermal performance and power performance as we scale to sub-micron dimensions
$10,838.00
Dec 20, 2020
For-profit organization
Innovation Assistance Program – Round 2.5
967972
The funding provided from the Innovation Assistance Program is to assist innovative, early-stage small- and medium-sized enterprises that are unable to access existing COVID-19 business support.
$25,000.00
Jul 1, 2020
For-profit organization
Power-Efficient Transistor for I/O Applications: Contact Materials & Interfaces
953243
Power-efficiency is a key performance metric for the next-generation of consumer electronics, and is achieved by reducing the power consumption of device components such as input/out (I/O) transistors used in backend processes. Wide-band oxide semiconductors are prime candidates to replace silicon-based I/O transistors, due to its high field tolerance. Their efficiency performance can be further improved by interfacing the transistor's source and drain regions with a contact electrode materials that minimizes contact resistance. The goal of this project is to develop manufacturing recipes for a promising set of select contact materials to achieve ideal minimizes power dissipation and thereby improving power performance.
$24,352.00
Jun 25, 2020
For-profit organization
Innovation Assistance Program – Round 2
960999
The funding provided from the Innovation Assistance Program is to assist innovative, early-stage small and medium-sized enterprises that are unable to access existing COVID-19 business support.
$20,328.00
Apr 1, 2020
For-profit organization
Innovation Assistance Program
951349
The funding provided from the IAP program is to assist innovative, early-stage small- and medium-sized enterprises that are unable to access existing COVID-19 business support.
$20,000.00
Jun 24, 2019
For-profit organization
Decreasing the Carbon-Footprint of Atomic Layer Deposited Silicon Nitride
930512
Silicon nitride (SiN) is an important material in the semiconductor industry particularly for logic and memory applications. Atomic layer deposition (ALD) is suited for the growth of SiN films because of its extremely precise film thickness control and high conformality. Currently, most ALD processes are affected by non-idealities including steric hindrance and parasitic non-ALD growth processes. Consequently, this project aims to quantify how these non-idealities and the various growth parameters affect the ALD SiN growth by developing a quantitative ALD model. This predictive ALD model can characterize the efficiency of the SiN deposition and thus provide a roadmap towards reducing the carbon footprint of the ALD SiN process.